PECVD SiNx on Plasmatherm 790

The whole process takes about 2 hours.

1. Set substrate temperature to 250 °C;
2. Run "jdepprep" recipe that is a 15-minute etch of an empty chamber. Increase the etching time if needed;
3. Load a clean bare Si test wafer, run program "jpredep". The recipe consists of a 3-minute-long etch, followed by a 3-minute-long Ar plasma, and a 3-minute-long SiN deposition;
4. Load your wafer on top of the Si wafer. Run program "jSIN500". Skip the 3-minute-long Ar plasma, if desired. Pump the chamber for 15 minutes before you run the recipe. Growth rate about 1.59 Å/sec. 10 min 30 sec for ~ 100 nm. (etch time : 1 min 30 sec)