Etch SiNx with Plasmatherm 790

1. Pressure=35 mTorr, O­2=4.0 sccm, CF4=35 sccm, Power=75 W
2. Rate= 300 nm/ 2 min; (for SiNx prepared by FSIN500 in 790 for 10 min 30 min, the etch time is 1 min 30 sec)
3. Optional: dip into HF: DI water=1:5 for 10 seconds