Etch SiNx with Plasmatherm 720/790

by Plasmatherm 720

• Pressure=50 mTorr, O­₂=10 sccm, CF₄=70 sccm, Power=100 W
• Rate= 300 nm/ 1.5 min

by Plasmatherm 790

• Pressure=60 mTorr, O­₂=4 sccm, CF4=35 sccm, Power=75 W
• Rate=100 nm/1.5 min; 400 nm/ 5.5 min