AZ5214 as a positive photoresist

Note: 2.0 W is 2 mW/cm^2

1. Spin on HMDS, recipe 1 (4000 rpm, 40 second);
2. Spin on AZ5214, recipe 1;
3. Soft bake for 1 min at 95 °C;
4. Expose with mask on MA6 for 35-45 seconds;
5. AZ 312MIF: DI water=1:1, develop for 1 minute and rinse in DI water;
   
6. Post bake at 110 °C (2-6 mins).

--from Troy Abe

Rebecca’s recipe for AZ5214 (achieve 2.5 micron feature)

1. Clean pieces: acetone 30 sec ultrasonic, 3x; isopropanol 3x; N2 blow dry;
2. 110°C, 15+ min on foil, hotplate dehydrate bake;
3. HMDS 40 sec, 4,000 rpm, spinner recipe 1;
4. AZ5214 40 sec, 4,000 rpm, spinner recipe 1;
5. 95°C, 1 min hotplate softbake on glass slide, slide directly on hotplate;
6. Clean mask acetone 1x isopropanol 1x, N2 dry;
7. Light field mask: Expose 2.0 mW/cm2 for 25 sec using MA6, CL1
   Dark field mask: Expose 2.0mW/cm2 for 40 sec using MA6, CL1
   I use hard contact, WEC=contact;
8. Light field mask: Develop 20-25 sec, 1 : 1 AZMIF 312 : H2O
   Dark field mask: Develop 40 sec in 1 : 1.2 AFMIF 312 : H2O
   I always check the development time on a test sample first--
   sometimes it needs to be shorter. I constantly agitate my sample in the
   developer.
9. DI rinse about 1 min, N2 dry;
10. Inspect under microscope;
11. Hotplate hard bake: for liftoff of metal, no bake; for RIE of SiGe/Si/poly - 110°C, 3 min on foil; for SiO2 etch (HF/BOE or RIE) - 110°C 6 min on foil.

--from Rebecca Peterson